high voltage n-channel mosfet ? ? ? ?? rev.a0,august ? , ? 2010 ? | ? 1 ? ? ? ? WFW20N60 ? 600v n-channel mosfet features low intrinsic capacitances ? excellent switching characteristics ? to \ 3p ?? g \ gate,d \ drain,s \ sourse ? extended safe operating area ? unrivalled gate charge :98 nc (typ.) bvdss=600v,id=20a lower r ds(on) : 0.45 ? (max) @vg=10v ? 100% avalanche tested absolute maximum ratings tc=25 unless other wise noted symbol parameter WFW20N60 units v dss drain-sourse voltage 600 v i d drain current -continuous (tc=25 ) 20 a -continuous (tc=100 ) 12.7 a v gs gate-sourse voltage 30 v e as single plused avanche energy (note1) 690 mj i ar avalanche current (note2) 20 a p d power dissipation (tc=25 ) 208 w t j ,t stg operating and storage temperature range -55 ~ +150 tl maximum lead temperature for soldering purpose,1/8? from case for 5 seconds 300 thermal characteristics ? symbol parameter typ. max units r jc thermal resistance,junction to case -- 0.48 /w r ja thermal resistance,junc tion to ambient -- 41.7 /w www.wisdom-technologies.com
high voltage n-channel mosfet ? ? ? ?? rev.a0,august ? , ? 2010 ? | ? 2 ? ? electrical characteristics tc = 2 5 unless other wise noted ? symbol parameter test condition min. typ. max units off characteristics bv dss drain-sourse breakdown voltage id=250 a vgs=0 600 -- -- v bv dss / t j breakdown voltage temperature conficient i d =250 a,reference to 25 -- 0.6 -- v/ idss zero gate voltage drain current vds=600v, vgs=0v -- -- 1 a vds=480v, tc=125 10 a igssf gate-body leakage current, forward vgs=+30v, vds=0v -- -- 100 na ? igssr gate-body leakage current, reverse vgs=-30v, vds=0v -- -- -100 na ? on characteristics ? v gs(th) date threshold voltage id=250ua,vds=vgs 2 -- 4 v r ds(on) static drain-sourse on-resist ance id=10a,vgs=10v -- -- 0.3 ? dynamic characteristics ciss input capacitance vds=25v vgs=0 f=1.0mhz -- 1730 2250 pf coss output capacitance -- 960 1150 pf crss reverse transfer capacitance -- 85 -- pf switching characteristics ? td(on) turn-on delay time vdd=300v id=20a rg=25 (note 3,4) -- 46 90 ns tr turn-on rise time -- 140 280 ns td(off) turn-off delay time -- 175 350 ns tf turn-off fall time -- 100 200 ns qg total gate charge vds=480,vgs=10v id=20a (note 3,4) -- 57 72 nc qgs gate-sourse charge -- 11.5 14 nc qgd gate-drain charge 28 -- nc drain-sourse diode characteristics and maximum ratings i s maximun continuous drain-sourse diode forward current -- -- 20 a i sm maximun plused drain-sourse diodeforwad current -- -- 60 a v sd drain-sourse diode forward voltage id=20a -- -- 1.4 v trr reverse recovery time i s =20a,v gs =0v di f /dt=100a/ s (note3) -- 450 -- ns qrr reverse recovery charge -- 8.2 -- c *notes ? 1, l=3.2mh, ias=20.0a, vdd=50v, rg=25 ? , starting tj =25c ? 2, repetitive rating : pulse width lim ited by maximum junction temperature 3, pulse test : pulse width 300 s, duty cycle 2% 4, essentially independent of operating temperature ? www.wisdom-technologies.com
high voltage n-channel mosfet ? ? ? ?? rev.a0,august ? , ? 2010 ? | ? 3 ? ? typical characteristics www.wisdom-technologies.com
high voltage n-channel mosfet ? ? ? ?? rev.a0,august ? , ? 2010 ? | ? 4 ? ? typical characteristics (continued) www.wisdom-technologies.com
high voltage n-channel mosfet ? ? ? ?? rev.a0,august ? , ? 2010 ? | ? 5 ? ? ? www.wisdom-technologies.com
high voltage n-channel mosfet ? ? ? ?? rev.a0,august ? , ? 2010 ? | ? 6 ? ? ? ? www.wisdom-technologies.com
high voltage n-channel mosfet ? ? ? ?? rev.a0,august ? , ? 2010 ? | ? 7 ? ? package dimension ? ? www.wisdom-technologies.com
|
